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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27721


    Title: Electronic structure of CeCo2 thin films studied by X-ray absorption spectroscopy
    Authors: Dong, C. L.;Asokan, K.;Chen, Y. Y.;Chen, C. L.;Chen, J. L.;Liu, Y. S.;Chang, C. L.;Lee, J. F.;Guo, J. H.
    Contributors: 淡江大學物理學系
    Keywords: Cerium compounds;Charge transfer;Electronic structure;Film thickness;Valence bands;X ray absorption spectroscopy;Hybridization;K-edge threshold;Mixed valence;Occupancy;Thin films
    Date: 2008-04
    Issue Date: 2013-07-09 15:15:05 (UTC+8)
    Publisher: Amsterdam: Elsevier BV * North-Holland
    Abstract: We present a x-ray absorption near-edge structure study (XANES) at Ce L3-, and Co K-edges of CeCo2 thin films with the thickness varying from 30nm to 140nm. The Ce L3-edge measurements exhibit the mixed valence nature and tetravalent contribution that increases with the thickness of CeCo2. The variation in the spectral intensity observed at Co K-edge threshold indicates that there is a change in 3d occupancy and also in 3d-4f-5d hybridization. This study shows the effect of surface to bulk ratio and how it influences the charge transfer between Ce and Co ions and hence the electronic structure of CeCo2 thin films.
    Relation: Physica B: Condensed Matter 403(5-9), pp.854-855
    DOI: 10.1016/j.physb.2007.10.057
    Appears in Collections:[物理學系暨研究所] 期刊論文

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