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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27695

    Title: Band gap modification of single-walled carbon nanotube and boron nitride nanotube under a transverse electric field
    Authors: Chen, Chun-wei;Lee, Ming-hsien;Clark, S.-J.
    Contributors: 淡江大學物理學系
    Keywords: electrical;magnetic and optical;Nanoscale science and low-D systems
    Date: 2004-12
    Issue Date: 2009-12-31 10:37:58 (UTC+8)
    Publisher: Institute of Physics (IOP)
    Abstract: The electronic structures of carbon (C) and boron nitride (BN) nanotubes under a transverse electric field were investigated through the first-principles pseudopotential density-functional theory (DFT) calculations. It was found that band gap modifications occur both in the semiconducting C and BN nanotubes under an external electric field by inducing a semiconductor–metal transition. The variations of the band gap sizes with transverse electric fields are very different between C and BN nanotubes. In the semiconducting C nanotube, a sharp semiconductor–metal transition does not occur until a threshold electric field is achieved; the BN nanotube, on the other hand, shows a gradual reduction of the band gap size once an external electric field is applied due to the larger ionicity of BN bonds. In addition, the semiconductor–metal transition in both C and BN nanotubes occurs at a lower value of electric field with increasing diameter. The ability to tune the band gap in both C and BN nanotubes by an external electric field provides the possibility for future electronic and electro-optic nanodevice applications.
    Relation: Nanotechnology 15(12), pp.1837-1843
    DOI: 10.1088/0957-4484/15/12/025
    Appears in Collections:[物理學系暨研究所] 期刊論文

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