Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films

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题名:	Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
作者:	Ray, S. C.;Okpalugo, T. I. T.;Pao, C. W.;Tsai, H. M.;Chiou, J. W.;Jan, J. C.;彭維鋒;Pong, W. F.;Papakonstantinou, P.;McLaughlin, J. A.;Wang, W. J.
贡献者:	淡江大學物理學系
关键词:	A. Thin film;B. Vapour deposition;C. Infrared spectroscopy;D. Luminescence
日期:	2005-10-06
上传时间:	2009-12-31 10:36:38 (UTC+8)
出版者:	Elsevier
摘要:	We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Sisingle bondHn and Csingle bondHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
關聯:	Materials Research Bulletin 40(10), pp.1757-1764
DOI:	10.1016/j.materresbull.2005.05.009
显示于类别:	[物理學系暨研究所] 期刊論文

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