Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films

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Title:	Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
Authors:	Ray, S. C.;Okpalugo, T. I. T.;Pao, C. W.;Tsai, H. M.;Chiou, J. W.;Jan, J. C.;彭維鋒;Pong, W. F.;Papakonstantinou, P.;McLaughlin, J. A.;Wang, W. J.
Contributors:	淡江大學物理學系
Keywords:	A. Thin film;B. Vapour deposition;C. Infrared spectroscopy;D. Luminescence
Date:	2005-10-06
Issue Date:	2009-12-31 10:36:38 (UTC+8)
Publisher:	Elsevier
Abstract:	We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Sisingle bondHn and Csingle bondHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
Relation:	Materials Research Bulletin 40(10), pp.1757-1764
DOI:	10.1016/j.materresbull.2005.05.009
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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