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    題名: Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
    作者: Ray, S. C.;Okpalugo, T. I. T.;Pao, C. W.;Tsai, H. M.;Chiou, J. W.;Jan, J. C.;彭維鋒;Pong, W. F.;Papakonstantinou, P.;McLaughlin, J. A.;Wang, W. J.
    貢獻者: 淡江大學物理學系
    關鍵詞: A. Thin film;B. Vapour deposition;C. Infrared spectroscopy;D. Luminescence
    日期: 2005-10-06
    上傳時間: 2009-12-31 10:36:38 (UTC+8)
    出版者: Elsevier
    摘要: We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Sisingle bondHn and Csingle bondHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
    關聯: Materials Research Bulletin 40(10), pp.1757-1764
    DOI: 10.1016/j.materresbull.2005.05.009
    顯示於類別:[物理學系暨研究所] 期刊論文


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