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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27678


    Title: Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
    Authors: Ray, S. C.;Okpalugo, T. I. T.;Pao, C. W.;Tsai, H. M.;Chiou, J. W.;Jan, J. C.;彭維鋒;Pong, W. F.;Papakonstantinou, P.;McLaughlin, J. A.;Wang, W. J.
    Contributors: 淡江大學物理學系
    Keywords: A. Thin film;B. Vapour deposition;C. Infrared spectroscopy;D. Luminescence
    Date: 2005-10-06
    Issue Date: 2009-12-31 10:36:38 (UTC+8)
    Publisher: Elsevier
    Abstract: We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Sisingle bondHn and Csingle bondHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
    Relation: Materials Research Bulletin 40(10), pp.1757-1764
    DOI: 10.1016/j.materresbull.2005.05.009
    Appears in Collections:[物理學系暨研究所] 期刊論文

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