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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27658


    Title: Preparation of ferroelectric Pb(Zr1-xTix)O3/Si films by laser lift-off technique
    Authors: Lin, I-nan;林諭男;Hsieh, Kun-che;Lee, Kun-yu;Tai, Nyan-hua
    Contributors: 淡江大學物理學系
    Keywords: PZT;Thick film;Laser lift-off
    Date: 2004-01-01
    Issue Date: 2009-12-31 10:34:50 (UTC+8)
    Publisher: Elsevier
    Abstract: Materials characteristics and ferroelectric properties of thick xPb(Ni1/3Nb2/3)O3-(1-x)Pb(Zr0.52Ti0.48)O3 (x=0.3), PNN-PZT films, which were prepared by doctor-blade tape-casting and laser lift-off processes, were investigated. The underlying buffer materials were observed to influence significantly the densification behavior for the PNN-PZT sapphire layers. For PNN-PZT/sapphire films sintered without buffer layer, the substrates impose pronounced constraint on materials shrinkage, inducing the formation of porosity for the PNN-PZT layers. The proportion of pores is pronouncedly reduced when using a Pb(Zr0.52Ti0.48)O3 thin layer (<0.3 μm) prepared by metal-organic decomposition process as buffer layer. The PNN-PZT films transferred to silicon substrates by laser lift-off processes exhibit large electrical polarization characteristics (Pr=41.9 μC/cm2), with small coercive field (Ec=35.6 kV/cm).
    Relation: Journal of the European Ceramic Society 24(6), pp.975-978
    DOI: 10.1016/S0955-2219(03)00491-6
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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