Correlation of microwave dielectric properties and crystallinity for pulsed laser deposited Bi2(Zn1/3Nb2/3)2O7 thin films

doi:10.1016/S0955-2219(03)00494-1

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27656

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題名:	Correlation of microwave dielectric properties and crystallinity for pulsed laser deposited Bi2(Zn1/3Nb2/3)2O7 thin films
作者:	Cheng, Hsiu-fung;Chen, Yi-chun;Liu, Hsiang-lin;Hwa, Luu-gen;林諭男;Lin, I-nan
貢獻者:	淡江大學物理學系
關鍵詞:	Dielectric properties;Effective charge;FTIR;Microwave dielectric thin films;Pulsed laser deposition
日期:	2004-01-01
上傳時間:	2009-12-31 10:34:44 (UTC+8)
出版者:	Elsevier
摘要:	Correlation of microwave dielectric properties of Bi2(Zn1/3Nb2/3)2O7, BiZN thin films, which were pulsed laser deposited on Si(100) substrates, with crystallinity of BiZN phase was examined using Fourier Transform Infrared (FTIR) spectroscopy. Rigid-ion model analysis from FTIR spectra of the films reveals that the magnitude of effective charge for oxygen increases with improved crystallinity for BiZN films. In contrast, lattice vibrational modes of the films, which occur at ω01=341 cm−1, ω02=522 cm−1, and ω03=612 cm−1, insignificantly change with films' crystallinity. It implies that better crystallinity will induce higher polarization in BO6 oxygen octahedral, which improves microwave properties of pyrochlore materials. The dielectric constant measured at 200 cm−1 increases with substrate temperature used for depositing BiZN films, inferring that dielectric properties in low frequency regime of far infrared region are predominantly contributed by ionic polarization, and are strongly related to effective charges of oxygen species.
關聯:	Journal of the European Ceramic Society 24(6), pp.1791-1794
DOI:	10.1016/S0955-2219(03)00494-1
顯示於類別:	[物理學系暨研究所] 期刊論文

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