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    題名: Effect of Y2O3/MgO Co-doping on the electrical properties of base-metal-electroded BaTiO3 materials
    作者: Yang, Wei-chun;Hu, Chen-ti;林諭男;Lin, I-nan
    貢獻者: 淡江大學物理學系
    關鍵詞: Base-metal-electroded capacitor;BaTiO3;X7R
    日期: 2004
    上傳時間: 2009-12-31 10:34:34 (UTC+8)
    出版者: Elsevier
    摘要: Effect of MgO and Y2O3 additions on modifying the dielectric constant-temperature (K–T curve) properties of the base-metal-electroded BaTiO3 materials was systematically studied. The absolute value of (ΔC/C)−55 °C and (ΔC/C)125 °C can be reduced, i.e., be moved upward, by incorporating large enough concentration of MgO and Y2O3 additives into the BaTiO3, such that the K–T characteristics of the materials meet the X7R specification. The Y2O3 doping is more effective than the MgO doping in moving the (ΔC/C)−55 °C and (ΔC/C)125 °C upward, which can be attributed to the fact that Y2O3 species addition flattens the K–T curves without shifting the Curie point of the materials. However, the proportion of Y2O3 incorporated into the materials should exceed the solubility of the BaTiO3 materials such that the Y2O3 species can reside at the grain boundary region, forming a core-shell microstructure.
    關聯: Journal of the European Ceramic Society 24(6), pp.1479-1483
    DOI: 10.1016/S0955-2219(03)00400-X
    顯示於類別:[物理學系暨研究所] 期刊論文

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