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| 題名: | X-ray absorption spectroscopic investigations on oxidized Ni/Au contacts to p-GaN |
| 作者: | Jan, J. C.;Asokan, K.;Chiou, J. W.;彭維鋒;Pong, Way-faung;鄭伯昆;Tesng, P. K.;Chen, F. R;Chen, J. F.;Lee, J. S.;Wu, H.;Lin, J.;Chen, C. T. |
| 貢獻者: | 淡江大學物理學系 |
| 關鍵詞: | p-GaN;X-ray absorption;Ni/Au contacts;p-NiO |
| 日期: | 2001-03-01 |
| 上傳時間: | 2009-12-31 10:33:13 (UTC+8) |
| 出版者: | Malden: Wiley-Blackwell Publishing, Inc. |
| 摘要: | X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L3,2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface. |
| 關聯: | Journal of synchrotron radiation 8(2), pp.827-829 |
| DOI: | 10.1107/S0909049501001911 |
| 顯示於類別: | [物理學系暨研究所] 期刊論文
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