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    题名: X-ray absorption spectroscopic investigations on oxidized Ni/Au contacts to p-GaN
    作者: Jan, J. C.;Asokan, K.;Chiou, J. W.;彭維鋒;Pong, Way-faung;鄭伯昆;Tesng, P. K.;Chen, F. R;Chen, J. F.;Lee, J. S.;Wu, H.;Lin, J.;Chen, C. T.
    贡献者: 淡江大學物理學系
    关键词: p-GaN;X-ray absorption;Ni/Au contacts;p-NiO
    日期: 2001-03-01
    上传时间: 2009-12-31 10:33:13 (UTC+8)
    出版者: Malden: Wiley-Blackwell Publishing, Inc.
    摘要: X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L3,2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface.
    關聯: Journal of synchrotron radiation 8(2), pp.827-829
    DOI: 10.1107/S0909049501001911
    显示于类别:[物理學系暨研究所] 期刊論文


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