Enhancement of sp3-bonding in high-bias-voltage grown diamond-like carbon thin films studied by x-ray absorption and photoemission spectroscopy

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题名:	Enhancement of sp3-bonding in high-bias-voltage grown diamond-like carbon thin films studied by x-ray absorption and photoemission spectroscopy
作者:	彭維鋒;Pong, Way-faung;Ray, S. C.;Pao, C. W.;Tsai, H. M.;Chiou, J. W.;Tsai, M. H.;Okpalugo, T. I. T.;Papakonstantinou, P.;Pi, T. W.
贡献者:	淡江大學物理學系
日期:	2007-05-02
上传时间:	2009-12-31 10:30:36 (UTC+8)
出版者:	Institute of Physics (IOP)
摘要:	X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VB-PES) were used to elucidate the electronic and mechanical properties of diamond-like carbon (DLC) thin films deposited by the plasma-enhanced chemical vapour deposition method at various bias voltages (Vb) using a C2H2 vapour precursor in an Ar+ atmosphere. The increase of Vb is found to increase and decrease the contents of sp3- and sp2-bonded carbon atoms, respectively, i.e. the films become more diamond-like. The Young's modulus measurements show increases with the increase of the presence of sp3-bonded carbon atoms in the structure of the DLC films.
關聯:	Journal of Physics: Condensed Matter 19(17), pp.176204(6pages)
DOI:	10.1088/0953-8984/19/17/176204
显示于类别:	[物理學系暨研究所] 期刊論文

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