Al and N K-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy (SPEM) and x-ray emission measurements were performed on AlN nanotips grown on p- and n-type Si substrates (p-AlN and n-AlN). Features and intensities in the Al and N K-edge XANES spectra of these AlN nanotips overall are similar. In contrast, the intensities of the valence-band SPEM spectra of p-AlN are apparently larger than those of n-AlN, which indicates that the valence-band density of states of p-AlN exceeds that of n-AlN. This result may be related to the observed enhancement of field-emission intensity of AlN nanotips grown on the p-type Si substrate.
關聯:
Journal of Physics: Condensed Matter 17(48), pp.7523-7530
