Comparison of the electronic structure of AIN nanotips grown on p- and n-type Si substrates

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27617

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Title:	Comparison of the electronic structure of AIN nanotips grown on p- and n-type Si substrates
Authors:	錢凡之;Chien, F. Z.;Chiou, Jau-Wern;Tsai, H. M.;Bao, C.W.;Dong, C. L.;Chang, Ching-Lin;彭維鋒;Pong, Way-Faung;Tsai, M. H.;Shi, S. C.;Chen, C. F.;Chen, L. C.;Chen, K. H.;Hong, Ie-Hong;Chen, C. H.;Lin, H. J.;Guo, Jing-Hua
Contributors:	淡江大學物理學系
Date:	2005-12-07
Issue Date:	2009-12-31 10:30:14 (UTC+8)
Publisher:	Bristol: Institute of Physics Publishing Ltd.
Abstract:	Al and N K-edge x-ray absorption near-edge structure (XANES), scanning photoelectron microscopy (SPEM) and x-ray emission measurements were performed on AlN nanotips grown on p- and n-type Si substrates (p-AlN and n-AlN). Features and intensities in the Al and N K-edge XANES spectra of these AlN nanotips overall are similar. In contrast, the intensities of the valence-band SPEM spectra of p-AlN are apparently larger than those of n-AlN, which indicates that the valence-band density of states of p-AlN exceeds that of n-AlN. This result may be related to the observed enhancement of field-emission intensity of AlN nanotips grown on the p-type Si substrate.
Relation:	Journal of Physics: Condensed Matter 17(48), pp.7523-7530
DOI:	10.1088/0953-8984/17/48/006
Appears in Collections:	[物理學系暨研究所] 期刊論文

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