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    题名: Electron-and hole-doping effects on the electronic structure of manganite studied by x-ray absorption spectroscopy
    作者: Asokan, K.;Jan, J. C.;Rao, K. V. R.;Chiou, J. W.;Tsai, H. M.;Mookerjee, S.;彭維鋒;Pong, W. F.;Tsai, M. H.;Kumar, Ravi;Husain, Shahid;Srivastava, J. P.
    贡献者: 淡江大學物理學系
    日期: 2004-06-02
    上传时间: 2009-12-31 10:30:06 (UTC+8)
    出版者: Institute of Physics (IOP)
    摘要: The electronic structures of hole-doped La0.7Ca0.3MnO3 and electron-doped La0.7Ce0.3MnO3 manganites are investigated by x-ray absorption near-edge structure spectroscopy at the O and Mn K-, and Mn L3,2-edges. The Mn K- and L3,2-edge results show that Ce dopants increase the occupation of the Mn 4p and majority-spin eg orbitals and reduce the positive effective charge of some Mn ions. However, Ce doping also induces holes in O 2p derived states. As for La0.7Ca0.3MnO3, in contrast to previous understanding that Ca doping converts some Mn ions into the Mn4+ state, we find that Ca dopants actually increase the number of majority-spin eg electrons. We find instead that the holes created by Ca dopants are in the O 2p derived states.
    關聯: Journal of Physics: Condensed Matter 16(21), pp.3791-3800
    DOI: 10.1088/0953-8984/16/21/027
    显示于类别:[物理學系暨研究所] 期刊論文

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