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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27609

    Title: Photoluminescence characterization of ZnCdSe/ZnSe quantum dot systems with different ZnCdSe coverages
    Authors: Jen, Jen-Yi;Linb, Chen-Yen;Lee,Jia-Ren;Lu, Chien-Rong
    Contributors: 淡江大學物理學系
    Keywords: A. Nanostructure;A. Semiconductors;D. Luminescence
    Date: 2008-02
    Issue Date: 2013-06-13 11:23:24 (UTC+8)
    Publisher: Kidlington: Pergamon
    Abstract: We have characterized the temperature and excitation power density dependence of the photoluminescence (PL) spectra from ZnCdSe/ZnSe quantum dot (QD) system with different ZnCdSe coverages. A single spectral peak was observed from the sample composed of thick ZnCdSe layers while two peaks were observed from those with thin ZnCdSe layers. The temperature dependence of the peak position and width indicated that the spectral features originated from three-dimensionally confined QD systems. The relative intensity of spectral peaks remained the same even when the excitation power density was 80-fold weaker, and verified that different spectral lines originated from different groups of QDs instead of emissions from different excited states within one group of QDs. The thickness variation of spectral profiles also characterized the growth-mode evolution with the ZnCdSe thickness.
    Relation: Journal of Physics and Chemistry of Solids 69(2-3), pp.485-489
    DOI: 10.1016/j.jpcs.2007.07.031
    Appears in Collections:[物理學系暨研究所] 期刊論文

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