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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27581

    Title: Si K and Co L3 XANES study of thin film CoSi2
    Other Titles: 在Si K和Co L3 XANES對CoSi2薄膜研究
    Authors: 彭維鋒;Pong, Way-faung;Chang, Y. K.;Mayanovic, R. A.;Ho, G. H.;Lin, H. J.;Ko, S. H.;鄭伯昆;Tseng, P. K.;Chen, C. T.;Hirya, A.;Watanabe, M.
    Contributors: 淡江大學物理學系
    Date: 1996-05-01
    Issue Date: 2009-12-31 10:27:13 (UTC+8)
    Publisher: Elsevier
    Abstract: Abstract

    X-ray absorption near edge structure (XANES) spectra of thin-film CoSi2 were measured at the Si K- and Co L3-edge. The Si K-edge spectrum for CoSi2 showed a dramatic reduction of intensity in the first broad feature accompanied by an increase in intensity of a peaked feature at higher energies when compared to the spectrum for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonbonding band and a relatively narrow band of hybridized Si p - Co 3d antibonding states, respectively. The Co L3-edge white line spectrum for CoSi2 reveals three distinct features which can be attributed to excitations to the unoccupied Co 3d nonbonding states and hybridized antibonding Co (3d, 4s) - Si p states.
    Relation: Journal of Electron Spectroscopy and Related Phenomena 78, pp.107
    DOI: 10.1016/S0368-2048(96)80038-7
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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