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    题名: Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy
    作者: Chiou, Jau-Wern;Jan, J.C.;Tsai, H.M.;Pong, Way-Faung;Tsai, M.-H.;Hong, Ie-Hong;Klauser, R.;Lee, J.-F.;Hsu, Wei-Hua;Lin, Hong-Ming;Chen, Chien-Chang;Shen, C.H.;Chen, L.C.;Chen, K.H.
    贡献者: 淡江大學物理學系
    日期: 2003-06-02
    上传时间: 2009-12-31 10:24:41 (UTC+8)
    出版者: College Park: American Institute of Physics (AIP)
    摘要: X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about -0.9 eV relative to that of the thin film.
    關聯: Applied Physics Letters 82(22), pp.3949-3951
    DOI: 10.1063/1.1579871
    显示于类别:[物理學系暨研究所] 期刊論文

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