English  |  正體中文  |  简体中文  |  Items with full text/Total items : 62379/95055 (66%)
Visitors : 2292294      Online Users : 159
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27563

    Title: Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy
    Authors: Chiou, Jau-Wern;Jan, J.C.;Tsai, H.M.;Pong, Way-Faung;Tsai, M.-H.;Hong, Ie-Hong;Klauser, R.;Lee, J.-F.;Hsu, Wei-Hua;Lin, Hong-Ming;Chen, Chien-Chang;Shen, C.H.;Chen, L.C.;Chen, K.H.
    Contributors: 淡江大學物理學系
    Date: 2003-06-02
    Issue Date: 2009-12-31 10:24:41 (UTC+8)
    Publisher: College Park: American Institute of Physics (AIP)
    Abstract: X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about -0.9 eV relative to that of the thin film.
    Relation: Applied Physics Letters 82(22), pp.3949-3951
    DOI: 10.1063/1.1579871
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

    Files in This Item:

    File Description SizeFormat
    0003-6951_82(22)p3949-3951.pdf218KbAdobe PDF753View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback