English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 49194/83570 (59%)
造訪人次 : 7091508      線上人數 : 60
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27563


    題名: Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy
    作者: Chiou, Jau-Wern;Jan, J.C.;Tsai, H.M.;Pong, Way-Faung;Tsai, M.-H.;Hong, Ie-Hong;Klauser, R.;Lee, J.-F.;Hsu, Wei-Hua;Lin, Hong-Ming;Chen, Chien-Chang;Shen, C.H.;Chen, L.C.;Chen, K.H.
    貢獻者: 淡江大學物理學系
    日期: 2003-06-02
    上傳時間: 2009-12-31 10:24:41 (UTC+8)
    出版者: College Park: American Institute of Physics (AIP)
    摘要: X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about -0.9 eV relative to that of the thin film.
    關聯: Applied Physics Letters 82(22), pp.3949-3951
    DOI: 10.1063/1.1579871
    顯示於類別:[物理學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    0003-6951_82(22)p3949-3951.pdf218KbAdobe PDF649檢視/開啟
    index.html0KbHTML142檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋