Effect of boron doping on the electron-field-emission properties of nanodiamond films

doi:10.1063/1.1852068

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27554

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題名:	Effect of boron doping on the electron-field-emission properties of nanodiamond films
作者:	李彥志;Lee, Yen-chih;Lin, Su-jien;林諭男;Lin, I-nan;Cheng, Hsiu-fung
貢獻者:	淡江大學物理學系
日期:	2005-03-01
上傳時間:	2009-12-31 10:22:05 (UTC+8)
出版者:	American Institute of Physics (AIP)
摘要:	The electron-field-emission sEFEd behavior of the nanodiamond films was observed to be pronouncedly superior to that of the diamond films with micrometer- or submicrometer-sized grains, which is ascribed to the presence of abundant grains boundaries with sp2 bonds. Incorporation of boron species into the nanodiamond films further improves the EFE properties for the films. The best EFE properties achieved are turn-on field E0=18 V/mm with EFE capacity J=0.7 mA/cm2 at around 30 V/mm applied field. However, boron doping into the nanodiamond films does not result in consistent boron-content dependence of the EFE properties for the films as those in conventional micrometer-sized diamonds. The complication is explained by the fact that the small size of the diamond grains s,20 nmd may not be able to accommodate the boron species into the lattices to effectively act as acceptor dopants. Moreover, the formation of aggregates of the nanosized diamond grains may alter the local field enhancement factor, which further complicates the correlation of the field-emission behavior with the boron-doping concentration for the nanodiamond films.
關聯:	Journal of Applied Physics 97(5), pp.054310
DOI:	10.1063/1.1852068
顯示於類別:	[物理學系暨研究所] 期刊論文

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