淡江大學機構典藏:Item 987654321/27554
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27554


    Title: Effect of boron doping on the electron-field-emission properties of nanodiamond films
    Authors: 李彥志;Lee, Yen-chih;Lin, Su-jien;林諭男;Lin, I-nan;Cheng, Hsiu-fung
    Contributors: 淡江大學物理學系
    Date: 2005-03-01
    Issue Date: 2009-12-31 10:22:05 (UTC+8)
    Publisher: American Institute of Physics (AIP)
    Abstract: The electron-field-emission sEFEd behavior of the nanodiamond films was observed to be
    pronouncedly superior to that of the diamond films with micrometer- or submicrometer-sized grains, which is ascribed to the presence of abundant grains boundaries with sp2 bonds. Incorporation of boron species into the nanodiamond films further improves the EFE properties for the films. The best EFE properties achieved are turn-on field E0=18 V/mm with EFE capacity J=0.7 mA/cm2 at
    around 30 V/mm applied field. However, boron doping into the nanodiamond films does not result in consistent boron-content dependence of the EFE properties for the films as those in conventional micrometer-sized diamonds. The complication is explained by the fact that the small size of the diamond grains s,20 nmd may not be able to accommodate the boron species into the lattices to effectively act as acceptor dopants. Moreover, the formation of aggregates of the nanosized diamond
    grains may alter the local field enhancement factor, which further complicates the correlation of the field-emission behavior with the boron-doping concentration for the nanodiamond films.
    Relation: Journal of Applied Physics 97(5), pp.054310
    DOI: 10.1063/1.1852068
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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