Current image tunneling spectroscopy of boron-doped nanodiamonds

doi:10.1063/1.1834722

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27553

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題名:	Current image tunneling spectroscopy of boron-doped nanodiamonds
作者:	Cheng, Hsiu-fung;李彥志;Lee, Yen-chih;Lin, Su-jien;周義評;Chou, Yi-ping;Chen, Tom T.;林諭男;Lin, I-nan
貢獻者:	淡江大學物理學系
日期:	2005-01-26
上傳時間:	2009-12-31 10:21:52 (UTC+8)
出版者:	American Institute of Physics (AIP)
摘要:	The electron field emission properties of the nanodiamond films were examined using scanning tunneling microscopic sSTMd technique. Current image tunneling spectroscopic measurements reveal the direct dependence of electron tunneling/field emission behavior of the films on the proportion of grain boundaries present. Local tunneling current-voltage sIt–Vd measurements show that incorporation of boron species insignificantly alters the occupied state, but markedly modifies the empty state of the diamond films, viz. it induces the presence of impurity states for the films heavily doped with borons, resulting in smaller emission energy gap for the samples. Such a characteristic improves both the local electron field emission behavior of the diamond films measured by STM and the average electron field emission properties measured by conventional parallel plate setup. These results infer clearly that the presence of impurity states due to boron doping is a prime factor improving the field emission properties for these boron-doped nanodiamond films.
關聯:	Journal of Applied Physics 97(4), pp.044312
DOI:	10.1063/1.1834722
顯示於類別:	[物理學系暨研究所] 期刊論文

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