淡江大學機構典藏:Item 987654321/27550
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    Title: Electronic and bonding structures of B-C-N thin films investigated by x-ray absorption and photoemission spectroscopy
    Authors: Ray, S. C.;Tsai, H. M.;Bao, C. W.;Chiou, J. W.;Jan, J. C.;Krishna Kumar, K. P.;Pong, W. F.
    Contributors: 淡江大學物理學系
    Date: 2004-07-01
    Issue Date: 2009-12-31 10:21:11 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: X-ray absorption near-edge structure (XANES) and valence-band photoelectron spectroscopy (PES) were used to investigate the electronic and bonding structures of B-C-N thin films. The intensities of the sp2-bonded features in the C K-edge XANES spectra are found to generally decrease as the C concentration increases, whereas the intensities of the sp2-bonded features in the spectra of N K-edge XANES increase with the N concentration. The decrease of the intensities of the sp2-bonded features in the C and N K-edges XANES spectra correlates with the increase of the C/B and N/B concentration ratios and the increase of Young’s modulus. Valence-band PES spectra are found to be insensitive to the variations of the B and C concentrations in B-C-N compounds.
    Relation: Journal of Applied Physics 96(1), pp.208-211
    DOI: 10.1063/1.1759392
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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