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    Title: Observation of metal–insulator transition in Al–Pd–Re quasicrystals by x-ray absorption and photoemission spectroscopy
    Authors: Lay, Y. Y.;Jan, J. C.;Chiou, J. W.;Tsai, H. M.;Pong, W. F.;Tsai, M. H.;Pi, T. W.;Lee, J. F.;Ma, C. I.;Tseng, K. L.;Wang, C. R.;Lin, S. T.
    Contributors: 淡江大學物理學系
    Date: 2003-03-31
    Issue Date: 2009-12-31 10:18:32 (UTC+8)
    Publisher: College Park: American Institute of Physics (AIP)
    Abstract: Using x-ray absorption and valence-band photoelectron spectroscopy (PES) we investigated the electronic structures of icosahedral (i)-Al70Pd22.5Re7.5 quasicrystals (QCs) with a 4.2 K/300 K resistivity ratio, r, ranging from 8.3 to 107 obtained under various annealing conditions. Our Al K- and Pd L3-edge x-ray absorption results show that the density of states, N(E), near the Fermi level, EF, jumps to a larger value when r decreases down to below about 20.6. The valence-band PES results show that N(E) near EF is greatly reduced in i-Al70Pd22.5Re7.5 QCs relative to that of the pure metal, which confirms the existence of the pseudogap. The PES spectrum has a sharp cutoff at EF for r=8.3 QC, while it decreases smoothly down to zero at EF for larger r’s. The combined results suggest the occurrence of metal–insulator transition at an r between 13 and 20.6.
    Relation: Applied Physics Letters 82(13), pp.2035-2037
    DOI: 10.1063/1.1565183
    Appears in Collections:[物理學系暨研究所] 期刊論文

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