English  |  正體中文  |  简体中文  |  Items with full text/Total items : 57042/90725 (63%)
Visitors : 12442086      Online Users : 57
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27537

    Title: Al(Ge) metallization: The effect of Ge on the solubility of Si in Al
    Authors: Dale, C. J.;潘朝闊;Pan, C. K.;Flinner, J. L.;Chu, W. K.;Finstad, T. G.
    Contributors: 淡江大學物理學系
    Date: 1985-12
    Issue Date: 2009-12-31 10:17:51 (UTC+8)
    Publisher: College Park: American Institute of Physics (AIP)
    Abstract: The contact resistance between Al(Ge) alloys of various compositions and n+si has been measured using a four-terminal Kelvin probe. The samples processed for these measurements as well as similarly prepared thin films on unprocessed Si wafers have been characterized by both scanning and transmission electron microscopy after heat treatment in the temperature range 35~500 °C. The specific contact resistances for the alloys are comparable to those found for pure Al contacts to Si. However, the alloyed contacts show considerably more spiking into the Si substrate due to dissolution of Si in the metal layer. For temperatures around 350 °C, excessive spiking (compared to pure Al) is believed to be caused by increased solubility of Si in Al due to the presence of Ge. The reason for the enhanced solubility of Si in the alloy could be a counteraction of the strain in the Al lattice by Si and Ge. For anneals at 450 °C the extensive spiking could be associated with liquification of the contact metal.
    Relation: Journal of Applied Physics 58(11), pp.4459-4462
    DOI: 10.1063/1.336254
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

    Files in This Item:

    File Description SizeFormat
    0021-8979_58(11)p4459-4462.pdf780KbAdobe PDF427View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback