English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 55542/89856 (62%)
造訪人次 : 11003818      線上人數 : 43
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27537

    題名: Al(Ge) metallization: The effect of Ge on the solubility of Si in Al
    作者: Dale, C. J.;潘朝闊;Pan, C. K.;Flinner, J. L.;Chu, W. K.;Finstad, T. G.
    貢獻者: 淡江大學物理學系
    日期: 1985-12
    上傳時間: 2009-12-31 10:17:51 (UTC+8)
    出版者: College Park: American Institute of Physics (AIP)
    摘要: The contact resistance between Al(Ge) alloys of various compositions and n+si has been measured using a four-terminal Kelvin probe. The samples processed for these measurements as well as similarly prepared thin films on unprocessed Si wafers have been characterized by both scanning and transmission electron microscopy after heat treatment in the temperature range 35~500 °C. The specific contact resistances for the alloys are comparable to those found for pure Al contacts to Si. However, the alloyed contacts show considerably more spiking into the Si substrate due to dissolution of Si in the metal layer. For temperatures around 350 °C, excessive spiking (compared to pure Al) is believed to be caused by increased solubility of Si in Al due to the presence of Ge. The reason for the enhanced solubility of Si in the alloy could be a counteraction of the strain in the Al lattice by Si and Ge. For anneals at 450 °C the extensive spiking could be associated with liquification of the contact metal.
    關聯: Journal of Applied Physics 58(11), pp.4459-4462
    DOI: 10.1063/1.336254
    顯示於類別:[物理學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數
    0021-8979_58(11)p4459-4462.pdf780KbAdobe PDF423檢視/開啟



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋