Application of Block Diagonal Technique to Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaAs Zincblende Bulk and Quantum Wells

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27533

請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27533

題名:	Application of Block Diagonal Technique to Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaAs Zincblende Bulk and Quantum Wells
作者:	Chen, Chun-nan;Su, Wei-long;Chang, Kuo-ching;Chang, Sheng-hsiung;Chiang, Jih-chen;Lo, Ikai;Wang, Wan-tsang;Kao, Hsiu-fen;Lee, Meng-en
貢獻者:	淡江大學物理學系
關鍵詞:	conduction bands;gallium arsenide;III-V semiconductors;semiconductor quantum wells;spin-orbit interactions
日期:	2008-07
上傳時間:	2010-08-10 09:49:30 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	The 2 x 2 conduction band, 4 x 4 hole band, and 2 x 2 spin-orbit split-off band matrices of zincblende semiconductors are obtained by using a block diagonal technique. Importantly, the block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction band spin-splitting energies of GaAs zincblende bulk and quantum wells grown on [001]-, [111]-, and [110]-oriented substrates are formulated by solving the block diagonal matrices. The results show that odd-in-k terms exist in both the bulk and the quantum well expressions due to the bulk inversion asymmetry effect. The presence of these terms is shown to induce the spin-splitting phenomenon. (c) 2008 American Institute of Physics.
關聯:	Journal of Applied Physics 104(2), pp.024901(9 pages)
DOI:	10.1063/1.2907445
顯示於類別:	[物理學系暨研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
0021-8979_104(2)p024901.pdf		458Kb	Adobe PDF	681	檢視/開啟
index.html		0Kb	HTML	142	檢視/開啟

在機構典藏中所有的資料項目都受到原著作權保護.

TAIR相關文章