Application of Block Diagonal Technique to Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaAs Zincblende Bulk and Quantum Wells

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题名:	Application of Block Diagonal Technique to Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaAs Zincblende Bulk and Quantum Wells
作者:	Chen, Chun-nan;Su, Wei-long;Chang, Kuo-ching;Chang, Sheng-hsiung;Chiang, Jih-chen;Lo, Ikai;Wang, Wan-tsang;Kao, Hsiu-fen;Lee, Meng-en
贡献者:	淡江大學物理學系
关键词:	conduction bands;gallium arsenide;III-V semiconductors;semiconductor quantum wells;spin-orbit interactions
日期:	2008-07
上传时间:	2010-08-10 09:49:30 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	The 2 x 2 conduction band, 4 x 4 hole band, and 2 x 2 spin-orbit split-off band matrices of zincblende semiconductors are obtained by using a block diagonal technique. Importantly, the block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction band spin-splitting energies of GaAs zincblende bulk and quantum wells grown on [001]-, [111]-, and [110]-oriented substrates are formulated by solving the block diagonal matrices. The results show that odd-in-k terms exist in both the bulk and the quantum well expressions due to the bulk inversion asymmetry effect. The presence of these terms is shown to induce the spin-splitting phenomenon. (c) 2008 American Institute of Physics.
關聯:	Journal of Applied Physics 104(2), pp.024901(9 pages)
DOI:	10.1063/1.2907445
显示于类别:	[物理學系暨研究所] 期刊論文

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