The 2 x 2 conduction band, 4 x 4 hole band, and 2 x 2 spin-orbit split-off band matrices of zincblende semiconductors are obtained by using a block diagonal technique. Importantly, the block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction band spin-splitting energies of GaAs zincblende bulk and quantum wells grown on -, -, and -oriented substrates are formulated by solving the block diagonal matrices. The results show that odd-in-k terms exist in both the bulk and the quantum well expressions due to the bulk inversion asymmetry effect. The presence of these terms is shown to induce the spin-splitting phenomenon. (c) 2008 American Institute of Physics.
Journal of Applied Physics 104(2), pp.024901(9 pages)