Mg-induced increase of band gap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy

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题名:	Mg-induced increase of band gap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy
作者:	Chioiu, J. W.;Tsai, H. M;Pao, C. W.;Chien, F. Z.;Pong, W. F.;Chen, C. W.;Tsai, M.-H.;Wu, J. J.;Ko, C. H.;Chiang, H. H.;Lin, H.-J.;Lee, J. F.;Guo, J.-H.
贡献者:	淡江大學物理學系
关键词:	conduction bands;energy gap;II-VI semiconductors;nanostructured materials;photoluminescence;semiconductor doping;spectral line intensity;valence bands;wide band gap semiconductors;XANES;X-ray emission spectra;zinc compounds
日期:	2008-07
上传时间:	2010-08-10 09:47:53 (UTC+8)
出版者:	College Park: American Institute of Physics (AIP)
摘要:	X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the effect of Mgdoping in ZnOnanorods. The intensities of the features in the O K-edge XANES spectra of Zn1−xMgxOnanorods are lower than those of pure ZnOnanorods, suggesting that Mgdoping increases the negative effective charge of O ions. XES and XANES spectra of O 2p states indicate that Mgdoping raises (lowers) the conduction-band-minimum (valence-band-maximum) and increases the band gap. The band gap is found to increase linearly with the Mg content, as revealed by photoluminescence and combined XANES and XES measurements.
關聯:	Journal of Applied Physics 104(1), pp.013709(4 pages)
DOI:	10.1063/1.2951939
显示于类别:	[物理學系暨研究所] 期刊論文

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