淡江大學機構典藏:Item 987654321/27532
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    Title: Mg-induced increase of band gap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy
    Authors: Chioiu, J. W.;Tsai, H. M;Pao, C. W.;Chien, F. Z.;Pong, W. F.;Chen, C. W.;Tsai, M.-H.;Wu, J. J.;Ko, C. H.;Chiang, H. H.;Lin, H.-J.;Lee, J. F.;Guo, J.-H.
    Contributors: 淡江大學物理學系
    Keywords: conduction bands;energy gap;II-VI semiconductors;nanostructured materials;photoluminescence;semiconductor doping;spectral line intensity;valence bands;wide band gap semiconductors;XANES;X-ray emission spectra;zinc compounds
    Date: 2008-07
    Issue Date: 2010-08-10 09:47:53 (UTC+8)
    Publisher: College Park: American Institute of Physics (AIP)
    Abstract: X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the effect of Mgdoping in ZnOnanorods. The intensities of the features in the O K-edge XANES spectra of Zn1−xMgxOnanorods are lower than those of pure ZnOnanorods, suggesting that Mgdoping increases the negative effective charge of O ions. XES and XANES spectra of O 2p states indicate that Mgdoping raises (lowers) the conduction-band-minimum (valence-band-maximum) and increases the band gap. The band gap is found to increase linearly with the Mg content, as revealed by photoluminescence and combined XANES and XES measurements.
    Relation: Journal of Applied Physics 104(1), pp.013709(4 pages)
    DOI: 10.1063/1.2951939
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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