Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27529

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題名:	Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
作者:	Chiou, J. W.;Mookerjee, S.;Rao, K. V. R.;Jan, J. C.;Tsai, H. M.;Asokan, K.;Pong, W. F.;Chien, F. Z.;Tsai, M. H.;Chang, Y. K.;Chen, Y. Y.;Lee, J. F.;Lee, C. C.;Chi, G. C.
貢獻者:	淡江大學物理學系
日期:	2002-10-28
上傳時間:	2009-12-31 10:16:02 (UTC+8)
出版者:	College Park: American Institute of Physics (AIP)
摘要:	As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L3-edge. The angle dependence of the XANES spectra shows that the Ga–N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. © 2002 American Institute of Physics.
關聯:	Applied Physics Letters 81(18), pp.3389-3391
DOI:	10.1063/1.1518776
顯示於類別:	[物理學系暨研究所] 期刊論文

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