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    題名: Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
    作者: Chiou, J. W.;Mookerjee, S.;Rao, K. V. R.;Jan, J. C.;Tsai, H. M.;Asokan, K.;Pong, W. F.;Chien, F. Z.;Tsai, M. H.;Chang, Y. K.;Chen, Y. Y.;Lee, J. F.;Lee, C. C.;Chi, G. C.
    貢獻者: 淡江大學物理學系
    日期: 2002-10-28
    上傳時間: 2009-12-31 10:16:02 (UTC+8)
    出版者: College Park: American Institute of Physics (AIP)
    摘要: As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L3-edge. The angle dependence of the XANES spectra shows that the Ga–N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. © 2002 American Institute of Physics.
    關聯: Applied Physics Letters 81(18), pp.3389-3391
    DOI: 10.1063/1.1518776
    顯示於類別:[物理學系暨研究所] 期刊論文

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