Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy

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題名:	Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy
作者:	Tsai, H. M.;Ray, S. C.;Pao, C. W.;Chiou, J. W.;Huang, C. L.;Du, C. H.;Pong, W. F.;Tsai, M.-H.;Fukano, A.;Oyanagi, H.
貢獻者:	淡江大學物理學系
關鍵詞:	bond lengths;high-k dielectric thin films;permittivity;photoelectron spectra;silicon compounds;valence bands;XANES
日期:	2008-01
上傳時間:	2010-08-10 09:48:31 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	The dielectric properties associated with the electronic and bonding structures of SiO2 films were examined using the Si L3,2- and O K-edge x-ray absorption near-edge structures (XANES) and valence-band photoemission spectroscopy (VB-PES) techniques. The Si L3,2- and O K-edge XANES measurements for the low-temperature grown UV-photon oxidized SiO2 (UV-SiO2) and the conventional high-temperature thermal-oxidized SiO2 (TH-SiO2) suggest enhancement of O 2p–Si 3p hybridization in UV-SiO2. VB-PES measurements reveal enhancement of nonbonding O 2p and O 2p–Si 3p hybridized states. The enhanced O 2p and Si 3p hybridization implies a shortening of the average Si–O bond length, which explains an increase of the density and the improvement of the dielectric property of UV-SiO2.
關聯:	Journal of Applied Physics 103(1), pp.013704(4 pages)
DOI:	10.1063/1.2828144
顯示於類別:	[物理學系暨研究所] 期刊論文

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