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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27528


    Title: Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy
    Authors: Tsai, H. M.;Ray, S. C.;Pao, C. W.;Chiou, J. W.;Huang, C. L.;Du, C. H.;Pong, W. F.;Tsai, M.-H.;Fukano, A.;Oyanagi, H.
    Contributors: 淡江大學物理學系
    Keywords: bond lengths;high-k dielectric thin films;permittivity;photoelectron spectra;silicon compounds;valence bands;XANES
    Date: 2008-01
    Issue Date: 2010-08-10 09:48:31 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: The dielectric properties associated with the electronic and bonding structures of SiO2 films were examined using the Si L3,2- and O K-edge x-ray absorption near-edge structures (XANES) and valence-band photoemission spectroscopy (VB-PES) techniques. The Si L3,2- and O K-edge XANES measurements for the low-temperature grown UV-photon oxidized SiO2 (UV-SiO2) and the conventional high-temperature thermal-oxidized SiO2 (TH-SiO2) suggest enhancement of O 2p–Si 3p hybridization in UV-SiO2. VB-PES measurements reveal enhancement of nonbonding O 2p and O 2p–Si 3p hybridized states. The enhanced O 2p and Si 3p hybridization implies a shortening of the average Si–O bond length, which explains an increase of the density and the improvement of the dielectric property of UV-SiO2.
    Relation: Journal of Applied Physics 103(1), pp.013704(4 pages)
    DOI: 10.1063/1.2828144
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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