English  |  正體中文  |  简体中文  |  Items with full text/Total items : 62637/95499 (66%)
Visitors : 3033468      Online Users : 627
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27528

    Title: Enhancement of Si-O hybridization in low-temperature grown ultraviolet photo-oxided SiO2 film observed by x-ray absorption and photoemission spectroscopy
    Authors: Tsai, H. M.;Ray, S. C.;Pao, C. W.;Chiou, J. W.;Huang, C. L.;Du, C. H.;Pong, W. F.;Tsai, M.-H.;Fukano, A.;Oyanagi, H.
    Contributors: 淡江大學物理學系
    Keywords: bond lengths;high-k dielectric thin films;permittivity;photoelectron spectra;silicon compounds;valence bands;XANES
    Date: 2008-01
    Issue Date: 2010-08-10 09:48:31 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: The dielectric properties associated with the electronic and bonding structures of SiO2 films were examined using the Si L3,2- and O K-edge x-ray absorption near-edge structures (XANES) and valence-band photoemission spectroscopy (VB-PES) techniques. The Si L3,2- and O K-edge XANES measurements for the low-temperature grown UV-photon oxidized SiO2 (UV-SiO2) and the conventional high-temperature thermal-oxidized SiO2 (TH-SiO2) suggest enhancement of O 2p–Si 3p hybridization in UV-SiO2. VB-PES measurements reveal enhancement of nonbonding O 2p and O 2p–Si 3p hybridized states. The enhanced O 2p and Si 3p hybridization implies a shortening of the average Si–O bond length, which explains an increase of the density and the improvement of the dielectric property of UV-SiO2.
    Relation: Journal of Applied Physics 103(1), pp.013704(4 pages)
    DOI: 10.1063/1.2828144
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

    Files in This Item:

    File Description SizeFormat
    0021-8979_103(1)p013704.pdf349KbAdobe PDF674View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback