English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 56733/90513 (63%)
造訪人次 : 12070820      線上人數 : 32
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27516

    題名: Properties of Ba(Mg1/3Ta2/3)O-3 thin films prepared by pulsed-laser deposition
    作者: Chu, Y. H.;Lin, S. J.;Liu, K. S.;林諭男;Lin, I. N.
    貢獻者: 淡江大學物理學系
    日期: 2003-12-15
    上傳時間: 2009-12-31 10:14:06 (UTC+8)
    出版者: Japan Society of Applied Physics
    摘要: The dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) microwave thin films synthesized by an in situ pulsed-laser deposition (PLD) process were compared with those prepared by a two-step PLD process. The onset of crystallization for the BMT films is approximately 400°C, when in situ deposited, and is approximately 550°C, when two-step processed. Dielectric measurements indicate that complete crystallization for BMT films can be achieved only by processing the films at a sufficiently high temperature, which is 600°C for an in situ PLD process and is 800°C for a two-step PLD process. The microwave dielectric properties of BMT films, which were directly measured by an evanescent microwave probe (EMP) technique at 2.65 GHz measuring frequency, increase with substrate temperature, resulting in dielectric constant K=33.3 and dissipation factor tan δ =0.0158.
    關聯: Japanese journal of applied physics 42 pt.1(12), pp.7428-7431
    DOI: 10.1143/JJAP.42.7428
    顯示於類別:[物理學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋