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    題名: Properties of Ba(Mg1/3Ta2/3)O-3 thin films prepared by pulsed-laser deposition
    作者: Chu, Y. H.;Lin, S. J.;Liu, K. S.;林諭男;Lin, I. N.
    貢獻者: 淡江大學物理學系
    日期: 2003-12-15
    上傳時間: 2009-12-31 10:14:06 (UTC+8)
    出版者: Japan Society of Applied Physics
    摘要: The dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) microwave thin films synthesized by an in situ pulsed-laser deposition (PLD) process were compared with those prepared by a two-step PLD process. The onset of crystallization for the BMT films is approximately 400°C, when in situ deposited, and is approximately 550°C, when two-step processed. Dielectric measurements indicate that complete crystallization for BMT films can be achieved only by processing the films at a sufficiently high temperature, which is 600°C for an in situ PLD process and is 800°C for a two-step PLD process. The microwave dielectric properties of BMT films, which were directly measured by an evanescent microwave probe (EMP) technique at 2.65 GHz measuring frequency, increase with substrate temperature, resulting in dielectric constant K=33.3 and dissipation factor tan δ =0.0158.
    關聯: Japanese journal of applied physics 42 pt.1(12), pp.7428-7431
    DOI: 10.1143/JJAP.42.7428
    顯示於類別:[物理學系暨研究所] 期刊論文

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