Preparation of highly textured AlN films using Mo and Ti electrode for integrated AlN-based film bulk acoustic wave resonators

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27497

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题名:	Preparation of highly textured AlN films using Mo and Ti electrode for integrated AlN-based film bulk acoustic wave resonators
作者:	周正賢;Chou, Cheng-hsien;Lin, Yung-chen;Huang, Jin-hua;Tai, Nyan-hwa;林諭男;Lin, I-nan
贡献者:	淡江大學物理學系
关键词:	AlN;RF sputtering;buffer layer;FBAR
日期:	2006-01-01
上传时间:	2009-12-31 10:12:43 (UTC+8)
出版者:	Taylor & Francis
摘要:	Effect of buffer layer on the characteristics of the AlN thin films deposited on SiNx/Si substrate was systematically examined. Among the buffer layers examined, both Mo and Ti buffer layers can not only greatly enhance the (002) preferred orientation of the films, but also improve the smoothness of the AlN films, whereas the Al thin films contain large grains microstructure and resulting in rough surface and wide distribution of (002) preferred orientation of the films. AlN thin films with smooth surface with (r.m.s. < 6 nm) and narrow distribution of grains' orientation (rocking curve < 3.8°), which is suitable for fabricating the devices. A thin film bulk acoustic wave resonator with resonance frequency around 1.7 GHz was fabricated from thus obtained AlN thin films.
關聯:	Integrated Ferroelectrics 80, pp.407-413
DOI:	10.1080/10584580600663144
显示于类别:	[物理學系暨研究所] 期刊論文

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