Low-temperature laser processes for synthesizing (100)-textured Pb(Zr,Ti)O3 thin films on Si substrate

doi:10.1007/s00339-004-2947-9

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27496

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题名:	Low-temperature laser processes for synthesizing (100)-textured Pb(Zr,Ti)O3 thin films on Si substrate
作者:	林諭男;Lin, I-nan;朱英豪;Chu, Y. H.;Lin, S. J.;Liu, K. S.
贡献者:	淡江大學物理學系
日期:	2005-10-01
上传时间:	2009-12-31 10:12:40 (UTC+8)
出版者:	Springer
摘要:	High-performance Pb(Zr,Ti)O3, PZT, thin films were synthesized on Si substrates by using low-temperature laser-assisted processes, which combine pulsed laser deposition (PLD), laser lift-off (LLO) and laser-annealing (LA) processes. The PZT films were first grown on sapphire substrates at 400 °C, using Ba(Mg1/3Ta2/3)O3, BMT, as seeding layer, by the PLD process, and were then transferred to Si substrates at room temperature by a LLO transferring process. Utilization of the BMT layer is of critical importance in those processes, since it acted as a nucleation layer for the synthesis of the PZT thin films on the sapphire substrates and, at the same time, served as a sacrificial layer during laser irradiation in the LLO process. After the LLO process, the surfaces of the PZT films were recovered by the LA process for removing the damage induced by the LLO process. A thin BMT (∼30 nm) layer is randomly oriented, resulting in non-textured PZT films with good ferroelectric properties, viz. Pr=20.6 μC/cm2 and Ec=126 kV/cm, whereas a thick BMT (∼100 nm) layer is (100) preferentially oriented, leading to (100)-textured PZT films with markedly better ferroelectric properties, viz. Pr=34.4 μC/cm2 and Ec=360 kV/cm.
關聯:	Applied Physics A: Materials Science & Processing 81(5), pp.1059-1063
DOI:	10.1007/s00339-004-2947-9
显示于类别:	[物理學系暨研究所] 期刊論文

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