ENHANCEMENT ON CRYSTALLIZATION KINETICS OF Pb(Zr1 - xTix)O3 THIN FILMS PREPARED BY METAL-ORGANIC DECOMPOSITION PROCESS BY THE INCORPORATION OF NANO-POWDERS

doi:10.1080/10584580500413319

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27494

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題名:	ENHANCEMENT ON CRYSTALLIZATION KINETICS OF Pb(Zr1 - xTix)O3 THIN FILMS PREPARED BY METAL-ORGANIC DECOMPOSITION PROCESS BY THE INCORPORATION OF NANO-POWDERS
作者:	鄭秀鳳;Cheng, Hsiu-fung;Lin, Yin-chih;Lin, Cheng-hsiung;林諭男;Lin, I-nan
貢獻者:	淡江大學物理學系
日期:	2005-01-01
上傳時間:	2009-12-31 10:12:35 (UTC+8)
出版者:	Taylor & Francis
摘要:	Incorporation of nano-sized PZT powders (∼40 nm) into the Pb-Zr-Ti carboxylates was observed to pronouncedly enhance the kinetics of crystallization for the amorphous PZT films, which, in turn, improves the stability of the films. Lowest post-annealing temperature necessary to form the perovskite phase decreases from 600°C for powder-less PZT films to 550°C for nano-PZT incorporated films. Highest post-annealing temperature tolerable by the PZT films increases from 700°C for powder-less films to 750°C for the nano-PZT incorporated ones. The best ferroelectric properties achievable for nano-PZT incorporated films post-annealed at 750°C (1 h) are (Pr)750 = 23 μC/cm2 and (Ec)750 = 42.5 kV/cm, which are superior to those for powder-less PZT films post-annealed at 700°C for 1 h ((Pr')700 = 20.5 μC/cm2 and (Ec')700 = 36.7 kV/cm). The probable explanation for such a phenomenon is that the presence of nano-sized PZT particulates induces uniformly heterogeneous nucleation of perovskite phase over the PZT films, resulting in instantaneous formation of perovskite phase, which is less susceptible to PbO-loss phenomenon.
關聯:	Integrated Ferroelectrics 75, pp.69-79
DOI:	10.1080/10584580500413319
顯示於類別:	[物理學系暨研究所] 期刊論文

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