淡江大學機構典藏:Item 987654321/27493
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62822/95882 (66%)
造访人次 : 4025230      在线人数 : 1067
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/27493


    题名: Preparation of PNN-PZT thick film on Pt/Ti/SiO2/Si substrate by laser lift-off process
    作者: 李坤育;Li, Kun-yu;Tai, Nyan-hwa;林諭男;Lin, I-nan
    贡献者: 淡江大學物理學系
    日期: 2005
    上传时间: 2009-12-31 10:12:33 (UTC+8)
    出版者: Taylor & Francis
    摘要: Thick PNN-PZT films, about 25 μm, were successfully prepared by combining the screen printing and laser lift-off techniques. PNN-PZT films screen printed on sapphire substrate, after sintering at 1200°C (3 h), are secondary free perovskite, possessing good ferroelectric properties (Pr = 16.4 μC/cm2, Ec = 12.6 kV/cm). Silver-bonding and laser lift-off processes can successfully transfer the PNN-PZT films from the sapphire to silicon substrates, maintaining ferroelectric properties. The resulted PNN-PZT/Si thick films possess larger electrical polarization: (Pr = 16.5 μ C/cm2) with slightly larger coercive field (Ec = 24.6 kV/cm).
    關聯: Integrated Ferroelectrics 69(1), pp.135-141
    DOI: 10.1080/10584580590897470
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 大小格式浏览次数
    index.html0KbHTML66检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈