English  |  正體中文  |  简体中文  |  Items with full text/Total items : 52047/87178 (60%)
Visitors : 8681984      Online Users : 73
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27493

    Title: Preparation of PNN-PZT thick film on Pt/Ti/SiO2/Si substrate by laser lift-off process
    Authors: 李坤育;Li, Kun-yu;Tai, Nyan-hwa;林諭男;Lin, I-nan
    Contributors: 淡江大學物理學系
    Date: 2005
    Issue Date: 2009-12-31 10:12:33 (UTC+8)
    Publisher: Taylor & Francis
    Abstract: Thick PNN-PZT films, about 25 μm, were successfully prepared by combining the screen printing and laser lift-off techniques. PNN-PZT films screen printed on sapphire substrate, after sintering at 1200°C (3 h), are secondary free perovskite, possessing good ferroelectric properties (Pr = 16.4 μC/cm2, Ec = 12.6 kV/cm). Silver-bonding and laser lift-off processes can successfully transfer the PNN-PZT films from the sapphire to silicon substrates, maintaining ferroelectric properties. The resulted PNN-PZT/Si thick films possess larger electrical polarization: (Pr = 16.5 μ C/cm2) with slightly larger coercive field (Ec = 24.6 kV/cm).
    Relation: Integrated Ferroelectrics 69(1), pp.135-141
    DOI: 10.1080/10584580590897470
    Appears in Collections:[物理學系暨研究所] 期刊論文

    Files in This Item:

    File SizeFormat

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback