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    題名: Electron- and Hole-Doping Effects in Manganites Studied by X-Ray Absorption Spectroscopy
    作者: Asokan, K.;Jan, J. C.;Rao, K. V. R.;Chiou, J. W.;Tsai, H. M.;彭維鋒;Pong, Way-faung;Tsai, M. H.;Kumar. R.
    貢獻者: 淡江大學物理學系
    關鍵詞: electron-doping;electronic structures;hole-doping;manganites;XANES
    日期: 2005-01-01
    上傳時間: 2009-12-31 10:11:59 (UTC+8)
    出版者: Kluwer
    摘要: We investigate the electronic structures of hole-doped, La0.7Ca0.3MnO3, and electron-doped, La0.7Ce0.3MnO3, manganites by x-ray absorption near edge structure (XANES) spectroscopy at the O and Mn K-edges. While, the O K-edge XANES results indicate that Ca and Ce doping induce holes in O 2p derived states, the Mn K-edge XANES do not give any evidence for creation of the Mn4+ (or Mn2+) ions by Ca (or Ce) dopants. Such results further questions the validity of double exchange mechanism in understanding the anomalous properties of manganites.
    關聯: Hyperfine Interactions 160(1), pp.181-187
    DOI: 10.1007/s10751-005-9162-8
    顯示於類別:[物理學系暨研究所] 期刊論文

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