淡江大學機構典藏:Item 987654321/27483
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    題名: Low Temperature Preparation of Pb(Zr0.52Ti0.48)O3 Thin Films Using Pulsed Excimer Laser Annealing Process
    作者: Kuchipudi, Srinivas;史瑞文;Lee, Hsiu-chuan;Huang, Jin-hua;林諭男;Lin, I-nan
    貢獻者: 淡江大學物理學系
    關鍵詞: Laser annealing;PZT
    日期: 2005-01-01
    上傳時間: 2009-12-31 10:11:37 (UTC+8)
    出版者: Taylor & Francis
    摘要: In-Situ Laser annealing of Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films (0.6 mm) prepared by metalorganic decomposition (MOD) process on Pt/SiO 2 /Si substrates were investigated. The annealing of the films is done by simultaneously heating the substrate to 400°C and laser annealing at room temperature using KrF excimer laser (248 nm). The properties of in-situ laser annealed films were compared with the RTA annealed films. It is observed that in-situ annealed films show better density and smaller grain formation than RTA annealed films. The properties of in-situ laser annealed films were studied as a function of laser repetition frequency; laser duration time and laser energy density. Good crystallized films were obtained for laser repetition frequency of 4∼6 Hz. It is observed that the laser duration time has no effect on the crystallization of the PZT films However, the increase in laser energy density for laser annealing is found to decrease the grain size. The optimum laser energy density for in-situ laser annealing is found to be 120 mJ/cm 2 . The ferroelectric properties in-situ laser annealed PZT films were compared with respect to laser energy density. In the present studies the in-situ laser annealing with laser energy of 125 mJ/cm 2 annealed for 120 s has shown better remnant polarization than those reported in literature.
    關聯: Ferroelectrics 328, pp.33-40
    DOI: 10.1080/00150190500310898
    顯示於類別:[物理學系暨研究所] 期刊論文

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