English  |  正體中文  |  简体中文  |  Items with full text/Total items : 56450/90276 (63%)
Visitors : 11707820      Online Users : 47
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27476

    Title: Influence of vacancy defect density on electrical properties of armchair single wall carbon nanotube
    Authors: Tien, Li-gan;Tsai, Chuen-horng;Li, Feng-yin;Lee, Ming-hsien
    Contributors: 淡江大學物理學系
    Keywords: armchair carbon nanotube;vacancy defect density;dangling bond
    Date: 2008-04
    Issue Date: 2009-12-31 10:11:12 (UTC+8)
    Publisher: Lausanne: Elsevier S.A.
    Abstract: The relationship between the bandgap and the vacancy density is investigated from first principles. The range influence of a vacancy defect due to structural deformation is characterized and a microscopic explanation is proposed to relate the structural deformation to the bandgap variation. In order to investigate the effect of the defect density on carbon nanotube, 5 models of (5,5) armchair carbon nanotubes were built with the defect density as one vacancy per 79, 119, 159, 199 and 239 carbon atoms, respectively. The long range of influence of a MVD is characterized by structural deformation analysis and the strain caused by the MVD is the main reason to cause the strong fluctuation in bandgap of the defected armchair SWCNTs. However, no simple correlation between the MVD density and bandgap, are found. Our results can shed some light on the instability of the defected armchair SWCNTs in electronic properties synthesized via ion-irradiation for future potential applications. (C) 2007 Elsevier B.V. All rights reserved.
    Relation: Diamond and Related Materials 17(4-5), pp.563-566
    DOI: 10.1016/j.diamond.2007.08.015
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

    Files in This Item:

    File Description SizeFormat

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback