Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27473

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題名:	Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer
作者:	林諭男;Lin, I-nan
貢獻者:	淡江大學物理學系
關鍵詞:	MPECVD;AlN;UNCD;RF-sputtering;Buffer layer
日期:	2006-02-01
上傳時間:	2009-12-31 10:11:03 (UTC+8)
出版者:	Elsevier
摘要:	The AlN thin films were deposited on ultra-nano-crystalline diamond films (UNCD) using a buffer layer for the purpose of increasing the adhesion between the layers, enhancing the (002) texture characteristics of the films and improving the surface morphology of the AlN on UNCD films. The TiN/Ti double layer performs markedly superior on improving these characteristics of UNCD thin films to the TiN (or Ti) single layer does, which is ascribed to the additive performance of the two layers, viz. the Ti-layer improves the adhesion of the layers, whereas the TiN-layer minimizes the interaction of AlN with the underlying layer. The AlN/TiN/Ti/UNCD thin films with highly preferred-orientation (rocking curve < 4°∼5°), ultra flat and smooth surface (roughness < 15 nm ) and good piezoelectric properties (d33 ∼4.9 pm/V), which were good enough for device application, was obtained.
關聯:	Diamond and Related Materials 15(2-3), pp.404-409
DOI:	10.1016/j.diamond.2005.07.032
顯示於類別:	[物理學系暨研究所] 期刊論文

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