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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27473


    Title: Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer
    Authors: 林諭男;Lin, I-nan
    Contributors: 淡江大學物理學系
    Keywords: MPECVD;AlN;UNCD;RF-sputtering;Buffer layer
    Date: 2006-02
    Issue Date: 2009-12-31 10:11:03 (UTC+8)
    Publisher: Elsevier
    Abstract: The AlN thin films were deposited on ultra-nano-crystalline diamond films (UNCD) using a buffer layer for the purpose of increasing the adhesion between the layers, enhancing the (002) texture characteristics of the films and improving the surface morphology of the AlN on UNCD films. The TiN/Ti double layer performs markedly superior on improving these characteristics of UNCD thin films to the TiN (or Ti) single layer does, which is ascribed to the additive performance of the two layers, viz. the Ti-layer improves the adhesion of the layers, whereas the TiN-layer minimizes the interaction of AlN with the underlying layer. The AlN/TiN/Ti/UNCD thin films with highly preferred-orientation (rocking curve < 4°∼5°), ultra flat and smooth surface (roughness < 15 nm ) and good piezoelectric properties (d33 ∼4.9 pm/V), which were good enough for device application, was obtained.
    Relation: Diamond and Related Materials 15(2-3), pp.404-409
    DOI: 10.1016/j.diamond.2005.07.032
    Appears in Collections:[物理學系暨研究所] 期刊論文

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