Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/27472

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题名:	Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique
作者:	李彥志;Lee, Yen-chih;Lin, Su-jien;Pradhan, Debabrata;林諭男;Lin, I-nan
贡献者:	淡江大學物理學系
关键词:	UNCD;High speed growth;BEN;MPECVD
日期:	2006-02-01
上传时间:	2009-12-31 10:10:59 (UTC+8)
出版者:	Elsevier
摘要:	Ultrananocrystalline diamond (UNCD) films, which possess very smooth surface, were synthesized using CH4/Ar plasma. When the nucleation process was carried out under methane and hydrogen (CH4/H2) plasma with negative DC bias voltage, no pretreatment on substrate was required prior to the formation of diamond nuclei. The average grain size of BEN induced diamond nuclei is about 20∼30 nm, with the nucleation site density more than 1011 sites/cm2. The growth rate of UNCD is markedly enhanced due to the application of BEN induced nuclei. Moreover, the growth rate of UNCD films was more significantly affected by the substrate temperature, but was less influenced by the microwave power. All of these UNCD films showed similar morphology, i.e., with grain size less than 10 nm and surface roughness around 10 nm. They also possess similar Raman spectra, i.e., similar crystallinity. However, the deposition rate can be increased from ∼0.2 to 1.0 μm/h when substrate temperature increased from 400 to 600 °C.
關聯:	Diamond and Related Materials 15(2-3), pp.353-356
DOI:	10.1016/j.diamond.2005.07.030
显示于类别:	[物理學系暨研究所] 期刊論文

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