Comparative study of nucleation processes for the growth of nanocrystalline diamond

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Title:	Comparative study of nucleation processes for the growth of nanocrystalline diamond
Authors:	劉彥崗;Liu, Y. K.;Tso, P. L.;林諭男;Lin, I-nan;Tzeng, Y.;Chen, Y. C.
Contributors:	淡江大學物理學系
Keywords:	Nanocrystalline diamond;NCD;Nucleation;MPCVD
Date:	2006-02-01
Issue Date:	2009-12-31 10:10:46 (UTC+8)
Publisher:	Elsevier
Abstract:	Methods for seeding silicon substrates with pretreatments and the in situ generation of diamond nuclei by the bias enhanced nucleation (BEN) have been studied to examine their effects on the nucleation density as well as the morphology of grown and seeded sides, the growth rate, and the quality of nanocrystalline diamond films. Pretreatments including mechanical abrasion by diamond paste, exposure of the silicon substrate to a hydrocarbon plasma, and ultrasonication of silicon in solvents with suspended nano- or micro-diamond powders were studied. With an optimized diamond seeding or nucleation process, ultra-thin, smooth and homogenous nanocrystalline diamond films can be fabricated.
Relation:	Diamond and Related Materials 15(2-3), pp.234-238
DOI:	10.1016/j.diamond.2005.06.020
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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