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    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27470

    题名: Comparative study of nucleation processes for the growth of nanocrystalline diamond
    作者: 劉彥崗;Liu, Y. K.;Tso, P. L.;林諭男;Lin, I-nan;Tzeng, Y.;Chen, Y. C.
    贡献者: 淡江大學物理學系
    关键词: Nanocrystalline diamond;NCD;Nucleation;MPCVD
    日期: 2006-02-01
    上传时间: 2009-12-31 10:10:46 (UTC+8)
    出版者: Elsevier
    摘要: Methods for seeding silicon substrates with pretreatments and the in situ generation of diamond nuclei by the bias enhanced nucleation (BEN) have been studied to examine their effects on the nucleation density as well as the morphology of grown and seeded sides, the growth rate, and the quality of nanocrystalline diamond films. Pretreatments including mechanical abrasion by diamond paste, exposure of the silicon substrate to a hydrocarbon plasma, and ultrasonication of silicon in solvents with suspended nano- or micro-diamond powders were studied. With an optimized diamond seeding or nucleation process, ultra-thin, smooth and homogenous nanocrystalline diamond films can be fabricated.
    關聯: Diamond and Related Materials 15(2-3), pp.234-238
    DOI: 10.1016/j.diamond.2005.06.020
    显示于类别:[物理學系暨研究所] 期刊論文


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