淡江大學機構典藏:Item 987654321/27464
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    题名: Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen
    作者: 劉彥崗;Liu, Y. K.;Tso, P. L.;Pradhan, D.;林諭男;Lin, I-nan;Clark, M.;Tzeng, Y.
    贡献者: 淡江大學物理學系
    关键词: Nanocrystalline diamond;NCD;Nitrogen-doped diamond;Electron field emission;MPECVD
    日期: 2005-11-01
    上传时间: 2009-12-31 10:10:28 (UTC+8)
    出版者: Elsevier
    摘要: Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.
    關聯: Diamond and Related Materials 14(11-12), pp.2059-2063
    DOI: 10.1016/j.diamond.2005.06.012
    显示于类别:[物理學系暨研究所] 期刊論文

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