English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 56733/90513 (63%)
造访人次 : 12070715      在线人数 : 42
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27464


    题名: Structural and electrical properties of nanocrystalline diamond (NCD) heavily doped by nitrogen
    作者: 劉彥崗;Liu, Y. K.;Tso, P. L.;Pradhan, D.;林諭男;Lin, I-nan;Clark, M.;Tzeng, Y.
    贡献者: 淡江大學物理學系
    关键词: Nanocrystalline diamond;NCD;Nitrogen-doped diamond;Electron field emission;MPECVD
    日期: 2005-11-01
    上传时间: 2009-12-31 10:10:28 (UTC+8)
    出版者: Elsevier
    摘要: Gas mixtures containing up to 40% nitrogen by volume and 1% CH4 with the balance being argon have been used for the deposition of nitrogen doped nanocrystalline diamond (NCD) films by means of microwave plasma enhanced chemical vapour deposition (MPECVD). The CVD plasma was monitored by optical emission spectroscopy to reveal the plasma species, e.g., CN molecules, as a function of the nitrogen additive. Structural properties of the deposited NCD films were studied by FESEM and Raman spectroscopy. Effects of nitrogen doping on the electrical resistivity and electron field emission characteristics of the NCD films were measured. In this work, correlation between the structural and electrical properties of NCD films and the nitrogen additive to the CVD plasma will be presented and discussed.
    關聯: Diamond and Related Materials 14(11-12), pp.2059-2063
    DOI: 10.1016/j.diamond.2005.06.012
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    0KbUnknown213检视/开启
    index.html0KbHTML91检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈