Total Energy Calculations for Silane Dissociative Chemisorption onto Si(100) and Si(111) Surfaces

doi:10.1002/jccs.200000120

淡江大學機構典藏 > 理學院 > 化學學系暨研究所 > 期刊論文 > Item 987654321/25410

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題名:	Total Energy Calculations for Silane Dissociative Chemisorption onto Si(100) and Si(111) Surfaces
作者:	林志興;郭于慈;陳奇成;李明憲
貢獻者:	淡江大學化學學系
日期:	2000-08-01
上傳時間:	2013-07-29 13:43:35 (UTC+8)
出版者:	臺北市：中國化學學會
摘要:	Total energy calculations based on density functional theory in connection with generalized gradient approximation (GGA) and norm-conserving optimized pseudopotential approximation have been used to investigate the silane chemisorption onto Si(111) and Si(100) surfaces. Firstly, the calculated relaxed surface structure of Si(100)-(2’2) has a different dangling bonds environment from that of the calculated relaxed surface structure of Si(111)-(1’1). Secondly, our calculated results indicate that SiH4 chemisorption onto both Si(100)-(2’2) and Si(111)-(1’1) surfaces are energetically favorable and they lead to the formation of SiH3 and H adsorbed on the Si=Si dimer, I.e. Si(100)-(2’2)(SiH3:H) and the surface dihydride SiH2 and 2H, I.e. Si(111)-(1’1)(SiH2:2H), respectively. Finally, the increase of dangling bond density and the absence of adatom backbond breaking are probably two of the key factors controlling the distinct increase in reaction probability for dissociative chemisorption of SiH4 onto Si(111)-(7’7) due to Si(111)-(7’7) ? Si(111)-(1’1) phase transition at surface temperature greater than 800 °C.
關聯:	Journal of the Chinese Chemical Society=中國化學會會誌 47(4B), pp.887-894
DOI:	10.1002/jccs.200000120
顯示於類別:	[化學學系暨研究所] 期刊論文

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