English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 55613/89938 (62%)
造訪人次 : 11054095      線上人數 : 280
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/25409

    題名: Thiophene-Phenylene and Thiophene-Thiazole Oligomeric Semiconductors with High Field-Effect Transistor On/Off Ratios
    作者: Hong, X. M.;Katz, H. E.;Lovinger, A. J.;王伯昌;Wang, B. C.;Raghavachari, K.
    貢獻者: 淡江大學化學學系
    日期: 2001-11-08
    上傳時間: 2009-12-01
    出版者: American Chemical Society (ACS)
    摘要: A series of thiophene-containing oligomers that are less electron rich than alpha-6T were synthesized, and the thin film morphologies and field-effect transistor characteristics of the oligomers were evaluated. Phenyl and thiazole rings were included in many of the oligomers, and a new synthesis of perfluoroalkylmethyl-terminated oligomers was developed. Desirably low off currents were associated with calculated highest occupied molecular orbital energies above ca. 5.0 eV relative to vacuum. Some of the oligomers displayed mobilities above 0.01 cm2 (Vs)-1, but there was no correlation of mobility with calculated orbital energies and some compounds with seemingly continuous morphologies had low mobilities nonetheless. One compound, 1,4-bis(5‘-hexyl-2,2‘-bithiophen-5-yl)benzene, showed promising behavior as a solution-deposited semiconductor, with mobility up to 0.02 cm2 (Vs)-1 and an on/off ratio up to 20 000.
    關聯: Chemistry of materials 13(12), pp.4686-4691
    DOI: 10.1021/cm010496z
    顯示於類別:[化學學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋