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    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/25387

    題名: Theoretical investigations of triphenylamine derivatives as hole transporting materials in OLEDs: Correction of the Hammet parameter of the substituent to ionization potential and reorganization energy level
    作者: Pan, Jiung-hung;Chiu, Houn-lin;Chen, Likey;王伯昌;Wang, Bo-cheng
    貢獻者: 淡江大學化學學系
    關鍵詞: TPA;HTM;AM1;Reorganization energy
    日期: 2006-11-01
    上傳時間: 2009-12-01
    出版者: Elsevier
    摘要: Recently, triphenylamine (TPA) and its derivatives become widely used in the organic light emitting diode (OLED) devices as a hole transporting material (HTM). The calculated ionization potential (Ip) and reorganization energy for the hole transport (λ+) for a series of triphenylamine (TPA) derivatives are related to their Hammett parameters (σ and σ+) theoretically. In this study, the semiempirical AM1 method has been used to optimize thirty-three TPA derivatives. The electronic structures of these compounds in the neutral and the radical-cation states were obtained based on the optimized geometrical structure. The Ip and λ+ values were generated by means of the calculated heat of formation (or total energy) for both the neutral and the radical-cation states. In particular, the calculated Ip’s for these derivatives were consistent with experimental data. The substitution effect for the mono-substituted TPA derivatives is displayed in that the TPA derivatives with the electron-donating substituent have lower Ip and those with electron-withdrawing substituent have higher Ip, comparing to that of non-substituted TPA derivative. The substituent effect in di- and tri-substituted TPA derivatives is more pronounced than that of the mono-substituted TPA derivatives. According to the calculated results, the calculated Ip shows an excellent agreement with the experimental oxidation potentials (Ep/2) of these TPA derivatives. Furthermore, these calculated results can be employed to predict the electro-luminescence properties for new and improved HTM.
    關聯: Computational Materials science 38(1), pp.105-112
    DOI: 10.1016/j.commatsci.2006.01.011
    顯示於類別:[化學學系暨研究所] 期刊論文


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