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https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/25317
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| 題名: | Synthesis, crystal structure, electrical properties, and band electronic structure of bis(1,3-propanediyldithio)tetrathiafulvalenium tetraiodoindate(III), (BPDT-TTF)3(InI4)2 |
| 作者: | 高惠春;Kao, Huey Chuen I.;Geiser, Urs;Wang, Hau H.;Schlueter, John;Chen, Marilyn Y.;Kini, Aravinda M.;Williams, Jack M.;Whangbo,Myung Hwan;Evain, Michel |
| 貢獻者: | 淡江大學化學學系 |
| 日期: | 1988-11 |
| 上傳時間: | 2009-12-01 |
| 出版者: | American Chemical Society (ACS) |
| 摘要: | A 3:2 salt (BPDT-TTF)â(InIâ)â was obtained by electrocrystallization and its structure was determined by single-crystal x-ray diffraction (triclinic, space group /bar P/1, a = 7.403 (2) /angstrom/, b = 9.170 (2) /angstrom/, c = 25.883 (7) /angstrom/, /alpha/ = 89.29 (2)/degree/, /beta/ = 96.34 (2)/degree/, /gamma/ = 92.83 (2)/degree/, V = 1774.2 (8) /angstrom/³, Z = 1). Analysis of the C/double bond/C and C/emdash/S bond lengths in the PT (i.e., BPDT-TTF) molecules suggest that this salt consists of donor molecules PT in two different oxidation states (i.e., BPDT-TTF/sup +/ and BPDT-TTF/sup 0.5+/). This oxidation assignment is consistent with the authors ESR measurements and band electronic structure calculations. The (BPDT-TTF)â(InIâ)â salt is a semiconductor at room temperature and below, which can be rationalized in terms of electron localization in the stacks of BPDT-TTF/sup +/ cations and the electronic instability associated with the well-nested Fermi surface for the layers of (BPDT-TTF)â/sup +/ dimers. Preliminary x-ray diffraction experiments indicate that (BPDT-TTF)â(T1Iâ)â is isostructural with (BPDT-TTF)â(InIâ)â. 28 refs., 7 figs., 3 tabs. |
| 關聯: | Inorganic chemistry 27(23), pp.4284-4289 |
| DOI: | 10.1021/ic00296a041 |
| 顯示於類別: | [化學學系暨研究所] 期刊論文
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