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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/19556

    Title: Electeonic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy
    Authors: Pao, C. W.;Babu, P. D.;Tsai, H. M.;Chiou, J. W.;Ray, S. C.;Yang, S. C.;Chien, F. Z.;Pong, W. F.;Tsai, M.-H.;Hsu, C. W.;Chen, L. C.;Chen, C. C.;Chen, K. H.;Lin, H.-J.;Lee, J. F.;Guo, J. H.
    Contributors: 淡江大學物理學系
    Date: 2006-05-01
    Issue Date: 2009-11-04 17:18:26 (UTC+8)
    Publisher: Melville: A I P Publishing LLC
    Abstract: Nitrogen N and metal Al, Ga, and In K-edge x-ray absorption near-edge structure XANES , x-ray emission spectroscopy XES , and Raman scattering measurements were performed to elucidate the electronic structures of group-III–nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.
    Relation: Applied physics letters 88(22), pp.223113
    DOI: 10.1063/1.2207836
    Appears in Collections:[物理學系暨研究所] 期刊論文

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